JPH0241741B2 - - Google Patents
Info
- Publication number
- JPH0241741B2 JPH0241741B2 JP57179325A JP17932582A JPH0241741B2 JP H0241741 B2 JPH0241741 B2 JP H0241741B2 JP 57179325 A JP57179325 A JP 57179325A JP 17932582 A JP17932582 A JP 17932582A JP H0241741 B2 JPH0241741 B2 JP H0241741B2
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- resist
- ultraviolet irradiation
- positive
- resist film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 claims description 18
- 239000000203 mixture Substances 0.000 claims description 12
- 150000001875 compounds Chemical class 0.000 claims description 10
- 238000011161 development Methods 0.000 claims description 5
- 230000001678 irradiating effect Effects 0.000 claims description 5
- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Chemical compound C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 claims description 4
- LTYMSROWYAPPGB-UHFFFAOYSA-N diphenyl sulfide Chemical compound C=1C=CC=CC=1SC1=CC=CC=C1 LTYMSROWYAPPGB-UHFFFAOYSA-N 0.000 claims description 3
- ARKQRZXCXIMZHG-UHFFFAOYSA-N 1-azido-4-[(4-azidophenyl)methyl]benzene Chemical compound C1=CC(N=[N+]=[N-])=CC=C1CC1=CC=C(N=[N+]=[N-])C=C1 ARKQRZXCXIMZHG-UHFFFAOYSA-N 0.000 claims description 2
- -1 4,4'-diazidodiphenyl disulfide Chemical compound 0.000 claims description 2
- 125000004429 atom Chemical group 0.000 claims description 2
- 229910052801 chlorine Chemical group 0.000 claims description 2
- 125000001309 chloro group Chemical group Cl* 0.000 claims description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 2
- 125000001424 substituent group Chemical group 0.000 claims description 2
- KZTYYGOKRVBIMI-UHFFFAOYSA-N diphenyl sulfone Chemical compound C=1C=CC=CC=1S(=O)(=O)C1=CC=CC=C1 KZTYYGOKRVBIMI-UHFFFAOYSA-N 0.000 claims 4
- 230000035945 sensitivity Effects 0.000 description 7
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000011521 glass Substances 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 3
- 229920003986 novolac Polymers 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- GUUVPOWQJOLRAS-UHFFFAOYSA-N Diphenyl disulfide Chemical compound C=1C=CC=CC=1SSC1=CC=CC=C1 GUUVPOWQJOLRAS-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- QVEIBLDXZNGPHR-UHFFFAOYSA-N naphthalene-1,4-dione;diazide Chemical compound [N-]=[N+]=[N-].[N-]=[N+]=[N-].C1=CC=C2C(=O)C=CC(=O)C2=C1 QVEIBLDXZNGPHR-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- LHCUYYJTVIYFEQ-UHFFFAOYSA-N 1-azido-3-(3-azidophenyl)sulfonylbenzene Chemical compound [N-]=[N+]=NC1=CC=CC(S(=O)(=O)C=2C=C(C=CC=2)N=[N+]=[N-])=C1 LHCUYYJTVIYFEQ-UHFFFAOYSA-N 0.000 description 1
- KRPUDHQXDFRBGF-UHFFFAOYSA-N 1-azido-4-(4-azidophenyl)sulfonylbenzene Chemical compound C1=CC(N=[N+]=[N-])=CC=C1S(=O)(=O)C1=CC=C(N=[N+]=[N-])C=C1 KRPUDHQXDFRBGF-UHFFFAOYSA-N 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- XUGUHTGSMPZQIW-UHFFFAOYSA-N [[4-(4-diazonioiminocyclohexa-2,5-dien-1-ylidene)cyclohexa-2,5-dien-1-ylidene]hydrazinylidene]azanide Chemical group C1=CC(N=[N+]=[N-])=CC=C1C1=CC=C(N=[N+]=[N-])C=C1 XUGUHTGSMPZQIW-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910001041 brightray Inorganic materials 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
- G03C5/00—Photographic processes or agents therefor; Regeneration of such processing agents
- G03C5/08—Photoprinting; Processes and means for preventing photoprinting
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57179325A JPS5968737A (ja) | 1982-10-13 | 1982-10-13 | ポジ型及びネガ型パタ−ンの同時形成方法 |
| DE19833337315 DE3337315A1 (de) | 1982-10-13 | 1983-10-13 | Zweifach-lichtempfindliche zusammensetzungen und verfahren zur erzeugung bildmustergemaesser photoresistschichten |
| US07/161,213 US4797348A (en) | 1982-10-13 | 1988-02-17 | Method of forming a positive resist pattern in photoresist of o-naphthoquinone diazide and bisazide with UV imaging exposure and far UV overall exposure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57179325A JPS5968737A (ja) | 1982-10-13 | 1982-10-13 | ポジ型及びネガ型パタ−ンの同時形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5968737A JPS5968737A (ja) | 1984-04-18 |
| JPH0241741B2 true JPH0241741B2 (en]) | 1990-09-19 |
Family
ID=16063860
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57179325A Granted JPS5968737A (ja) | 1982-10-13 | 1982-10-13 | ポジ型及びネガ型パタ−ンの同時形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5968737A (en]) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IE57143B1 (en) * | 1984-06-01 | 1992-05-06 | Rohm & Haas | Photosensitive coating compositions,thermally stable coating prepared from them,and the use of such coatings in forming thermally stable polymer images |
| JPS6115140A (ja) * | 1984-07-02 | 1986-01-23 | Fujitsu Ltd | パタ−ン作成方法 |
| JPS62100751A (ja) * | 1985-10-24 | 1987-05-11 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | 自己整合パタ−ンの形成方法 |
| JPS63167351A (ja) * | 1986-12-22 | 1988-07-11 | インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン | フォトレジスト組成物 |
| JP2573996B2 (ja) * | 1988-05-11 | 1997-01-22 | 日本電信電話株式会社 | パターン形成材料 |
| JPH02212850A (ja) * | 1989-02-14 | 1990-08-24 | Oki Electric Ind Co Ltd | パターン形成方法 |
| US6190829B1 (en) * | 1996-09-16 | 2001-02-20 | International Business Machines Corporation | Low “K” factor hybrid photoresist |
| JP4622282B2 (ja) * | 2003-03-26 | 2011-02-02 | 住友ベークライト株式会社 | ポジ型感光性樹脂組成物並びに半導体装置及び表示素子 |
| JP5239371B2 (ja) * | 2008-02-08 | 2013-07-17 | Ｊｓｒ株式会社 | パターン形成方法 |
| KR20130039124A (ko) * | 2011-10-11 | 2013-04-19 | 삼성전자주식회사 | 반도체 소자의 패턴 형성방법 |
| JP5951331B2 (ja) * | 2012-04-13 | 2016-07-13 | 株式会社クラレ | 微細構造体の製造方法 |
| CN112424691A (zh) * | 2018-07-09 | 2021-02-26 | 应用材料公司 | 用于线加倍的光刻胶组合物 |
-
1982
- 1982-10-13 JP JP57179325A patent/JPS5968737A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5968737A (ja) | 1984-04-18 |
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